Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, YW | en_US |
dc.contributor.author | Chen, CF | en_US |
dc.date.accessioned | 2014-12-08T15:41:58Z | - |
dc.date.available | 2014-12-08T15:41:58Z | - |
dc.date.issued | 2002-09-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28536 | - |
dc.description.abstract | Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited from a mixture of silane and methane gases using the plasma-enhanced chemical vapor deposition (PECVD) process. The properties of the film. following ammonia plasma treatment, are reported. A lower silane flow rate reduces the refractive index, but increases the carbon content and the optical band gap. Increasing the carbon concentration of the a-SiC:H films reduces the dielectric constant. The films were treated with ammonia plasma for various treatment periods. The original Film has a smooth surface with a roughness of 0.231 nm but increasing the ammonia plasma treatment period gradually roughens the surface. The chemical bonding nature of the a-SIC:H films with higher silicon content was investigated by X-ray photoelectron spectro.scop, Various nitrogen ioni/ation species reacted with Si to promote the formation of silicon nitride. As a result, although the dielectric constant of the a-SiC:H films, increased slightly, the leakage current density declined as the ammonia plasma treatment time increased. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | PECVD | en_US |
dc.subject | a-SiC : H | en_US |
dc.subject | ammonia plasma | en_US |
dc.subject | leakage current | en_US |
dc.subject | dielectric constant | en_US |
dc.title | Effects of ammonia plasma treatment on the electrical properties of plasma-enhanced chemical vapor deposition amorphous hydrogenated silicon carbide films | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 5734 | en_US |
dc.citation.epage | 5738 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000180071900054 | - |
dc.citation.woscount | 7 | - |
Appears in Collections: | Articles |
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