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dc.contributor.authorLi, YWen_US
dc.contributor.authorChen, CFen_US
dc.date.accessioned2014-12-08T15:41:58Z-
dc.date.available2014-12-08T15:41:58Z-
dc.date.issued2002-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/28536-
dc.description.abstractAmorphous hydrogenated silicon carbide (a-SiC:H) films were deposited from a mixture of silane and methane gases using the plasma-enhanced chemical vapor deposition (PECVD) process. The properties of the film. following ammonia plasma treatment, are reported. A lower silane flow rate reduces the refractive index, but increases the carbon content and the optical band gap. Increasing the carbon concentration of the a-SiC:H films reduces the dielectric constant. The films were treated with ammonia plasma for various treatment periods. The original Film has a smooth surface with a roughness of 0.231 nm but increasing the ammonia plasma treatment period gradually roughens the surface. The chemical bonding nature of the a-SIC:H films with higher silicon content was investigated by X-ray photoelectron spectro.scop, Various nitrogen ioni/ation species reacted with Si to promote the formation of silicon nitride. As a result, although the dielectric constant of the a-SiC:H films, increased slightly, the leakage current density declined as the ammonia plasma treatment time increased.en_US
dc.language.isoen_USen_US
dc.subjectPECVDen_US
dc.subjecta-SiC : Hen_US
dc.subjectammonia plasmaen_US
dc.subjectleakage currenten_US
dc.subjectdielectric constanten_US
dc.titleEffects of ammonia plasma treatment on the electrical properties of plasma-enhanced chemical vapor deposition amorphous hydrogenated silicon carbide filmsen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue9en_US
dc.citation.spage5734en_US
dc.citation.epage5738en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000180071900054-
dc.citation.woscount7-
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