標題: | Characteristics of copper films deposited on H(2)-plasma-treated TaN substrate by chemical vapor deposition |
作者: | Lin, CL Chen, PS Chang, CL Chen, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-九月-2002 |
摘要: | This work investigates the chemical vapor deposition Cu films deposited on the TaN substrate with and without an H(2)-plasma treatment prior to Cu film deposition and the effect of postdeposition thermal annealing. The Cu films deposited on the H(2)-plasma-treated TaN substrate have a number of favorable properties over the films deposited on the TaN substrate without the plasma treatment. These include an increased (111)-preferred orientation, smoother film surface, and a larger effective deposition rate. However, the Cu films deposited on the H(2)-plasma-treated substrate have a higher electrical resistivity, presumably due to the smaller, grain size. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. We presume that the H(2)-plasma treatment, resulted in a dense and uniform distribution of hydrogen radicals adsorbed on the substrate surface, leading to the shortening of incubation time and the formation of Cu films with a smoother surface and enhanced (100)-preferred orientation. A combined process including H(2)-plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N(2) ambient, is proposed for the advantage of low-resistivity and high (111)-oriented Cu film deposition. (C) 2002 American Vacuum Society. |
URI: | http://dx.doi.org/10.1116/1.1502697 http://hdl.handle.net/11536/28549 |
ISSN: | 1071-1023 |
DOI: | 10.1116/1.1502697 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 20 |
Issue: | 5 |
起始頁: | 1947 |
結束頁: | 1953 |
顯示於類別: | 期刊論文 |