標題: ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
作者: LIN, HC
LIN, HY
CHANG, CY
LEI, TF
WANG, PJ
DENG, RC
LIN, JD
CHAO, CY
機械工程學系
電控工程研究所
Department of Mechanical Engineering
Institute of Electrical and Control Engineering
公開日期: 13-九月-1993
摘要: The deposition of in situ heavily boron-doped polycrystalline silicon (poly-Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3X10(20) cm-3 were obtained for the as-deposited films grown at 550-degrees-C. For boron concentration beyond this level, the crystallinity of poly-Si films degraded with increasing boron concentration, which resulted in an anomalous rise in resistivity. This crystallinity degradation occurred at a higher rate for films grown on a SiO2 surface than those grown on an undoped poly-Si surface. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface. Under a high B2H6 flux condition, a large amount of boron atoms would accumulate on the SiO2 Surface before the formation of Si nuclei, and thus disturbs the subsequent film deposition and grain growth processes.
URI: http://dx.doi.org/10.1063/1.110737
http://hdl.handle.net/11536/2855
ISSN: 0003-6951
DOI: 10.1063/1.110737
期刊: APPLIED PHYSICS LETTERS
Volume: 63
Issue: 11
起始頁: 1525
結束頁: 1527
顯示於類別:期刊論文