標題: | ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION |
作者: | LIN, HC LIN, HY CHANG, CY LEI, TF WANG, PJ DENG, RC LIN, JD CHAO, CY 機械工程學系 電控工程研究所 Department of Mechanical Engineering Institute of Electrical and Control Engineering |
公開日期: | 13-九月-1993 |
摘要: | The deposition of in situ heavily boron-doped polycrystalline silicon (poly-Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3X10(20) cm-3 were obtained for the as-deposited films grown at 550-degrees-C. For boron concentration beyond this level, the crystallinity of poly-Si films degraded with increasing boron concentration, which resulted in an anomalous rise in resistivity. This crystallinity degradation occurred at a higher rate for films grown on a SiO2 surface than those grown on an undoped poly-Si surface. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface. Under a high B2H6 flux condition, a large amount of boron atoms would accumulate on the SiO2 Surface before the formation of Si nuclei, and thus disturbs the subsequent film deposition and grain growth processes. |
URI: | http://dx.doi.org/10.1063/1.110737 http://hdl.handle.net/11536/2855 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.110737 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 63 |
Issue: | 11 |
起始頁: | 1525 |
結束頁: | 1527 |
顯示於類別: | 期刊論文 |