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dc.contributor.authorChang, SCen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorLi, YHen_US
dc.date.accessioned2014-12-08T15:42:01Z-
dc.date.available2014-12-08T15:42:01Z-
dc.date.issued2002-09-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1500348en_US
dc.identifier.urihttp://hdl.handle.net/11536/28558-
dc.description.abstractIn this study, the effect of plating current densities on self-annealing behaviors of electroplated Cu films was found to be relevant to the polarization resistance of electroplating systems. Porous films with defects occurred at low plating current density or at low polarization resistance. In contrast, dense films with small grains occurred at higher plating current density or at higher polarization resistance. However, when more current was further supplied, Cu aggregation occurred and deposited films became spongy or dendritic. We suggest that both the defects within porous films and the underlying energy of fine-grained deposits accelerated self-annealing. These two characteristics competed with each other to determine the resistivity drop by self-annealing. On the other hand, the (111) texture evolutions of deposited Cu films with an increase of plating current densities were consistent with the evolutions of resistivity and surface morphology. (C) 2002 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleThe effect of plating current densities on self-annealing Behaviors of electroplated copper filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1500348en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume149en_US
dc.citation.issue9en_US
dc.citation.spageG535en_US
dc.citation.epageG538en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000177404600060-
dc.citation.woscount27-
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