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dc.contributor.authorZakharova, Aen_US
dc.contributor.authorYen, STen_US
dc.contributor.authorChao, KAen_US
dc.date.accessioned2019-04-03T06:39:51Z-
dc.date.available2019-04-03T06:39:51Z-
dc.date.issued2002-08-15en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.66.085312en_US
dc.identifier.urihttp://hdl.handle.net/11536/28581-
dc.description.abstractWe investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k(parallel to), so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band k.p model and the scattering matrix method. We have found that the order of levels at the zone center (k(parallel to)=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k(parallel to)=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition.en_US
dc.language.isoen_USen_US
dc.titleStrain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.66.085312en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume66en_US
dc.citation.issue8en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000177972500070en_US
dc.citation.woscount33en_US
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