Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching

Abstract

We report a novel method of fabricating gallium nitride (GaN) nanotods of controllable dimension and density from GaN epitaxial film using inductively coupled plasma reactive ion etching (ICP-RIE). The GaN epitaxial film was grown on a sapphire substrate by metal-organic chemical vapor deposition. Under the fixed Cl-2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W. the GaN nanorods and array were fabricated with a density of 10(8)-10(10) cm(-2) and dimension of 20-100 nm by varying the chamber pressure from 10 to 30 mTorr. The technique offers one-step, controllable method for the fabrication of GaN nanostructures and should be applicable for the fabrication of GaN-based nano-optoelectronic devices.