FORMATION OF N+P SHALLOW JUNCTION BY AS+ IMPLANTATION THROUGH COSI2 FILM

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, BS	en_US
dc.contributor.author	CHEN, MC	en_US
dc.date.accessioned	2014-12-08T15:04:21Z	-
dc.date.available	2014-12-08T15:04:21Z	-
dc.date.issued	1993-09-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.354497	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2860	-
dc.description.abstract	Junction formation by As+ ion implantation into CoSi2 and subsequent drive-in annealing was investigated. Diodes with a leakage current density of 0.4 nA/cm2 at 5 V reverse bias can be obtained by a 700-degrees-C/90 min furnace annealing. The performance of junction is mainly determined by the annealing temperature and time as well as the implantation dose. The implantation energy only has a minor effect on junction properties. Based on the experimental results, we define an appropriate process window for this junction formation technique.	en_US
dc.language.iso	en_US	en_US
dc.title	FORMATION OF N+P SHALLOW JUNCTION BY AS+ IMPLANTATION THROUGH COSI2 FILM	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1063/1.354497	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	74	en_US
dc.citation.issue	5	en_US
dc.citation.spage	3605	en_US
dc.citation.epage	3607	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993LV39100100	-
dc.citation.woscount	9	-
顯示於類別：	期刊論文