標題: Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots
作者: Li, Y
Voskoboynikov
Lee, CP
Sze, SM
Tretyak, O
電子工程學系及電子研究所
電子與資訊研究中心
Department of Electronics Engineering and Institute of Electronics
Microelectronics and Information Systems Research Center
公開日期: 1-八月-2002
摘要: In this article we study the impact of the spin-orbit interaction on the electron quantum confinement for narrow gap semiconductor quantum dots. The model formulation includes: (1) the effective one-band Hamiltonian approximation; (2) the position- and energy-dependent quasi-particle effective mass approximation; (3) the finite hard wall confinement potential; and (4) the spin-dependent Ben Daniel-Duke boundary conditions. The Hartree-Fock approximation is also utilized for evaluating the characteristics of a two-electron quantum dot system. In our calculation, we describe the spin-orbit interaction which comes from both the spin-dependent boundary conditions and the Rashba term (for two-electron quantum dot system). It can significantly modify the electron energy spectrum for InAs semiconductor quantum dots built in the GaAs matrix. The energy state spin-splitting is strongly dependent on the dot size and reaches an experimentally measurable magnitude for relatively small dots. In addition, we have found the Coulomb interaction and the spin-splitting are suppressed in quantum dots with small height.
URI: http://dx.doi.org/10.1140/epjb/e2002-00250-6
http://hdl.handle.net/11536/28614
ISSN: 1434-6028
DOI: 10.1140/epjb/e2002-00250-6
期刊: EUROPEAN PHYSICAL JOURNAL B
Volume: 28
Issue: 4
起始頁: 475
結束頁: 481
顯示於類別:期刊論文


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