Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Y | en_US |
dc.contributor.author | Voskoboynikov | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.contributor.author | Sze, SM | en_US |
dc.contributor.author | Tretyak, O | en_US |
dc.date.accessioned | 2014-12-08T15:42:07Z | - |
dc.date.available | 2014-12-08T15:42:07Z | - |
dc.date.issued | 2002-08-01 | en_US |
dc.identifier.issn | 1434-6028 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1140/epjb/e2002-00250-6 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28614 | - |
dc.description.abstract | In this article we study the impact of the spin-orbit interaction on the electron quantum confinement for narrow gap semiconductor quantum dots. The model formulation includes: (1) the effective one-band Hamiltonian approximation; (2) the position- and energy-dependent quasi-particle effective mass approximation; (3) the finite hard wall confinement potential; and (4) the spin-dependent Ben Daniel-Duke boundary conditions. The Hartree-Fock approximation is also utilized for evaluating the characteristics of a two-electron quantum dot system. In our calculation, we describe the spin-orbit interaction which comes from both the spin-dependent boundary conditions and the Rashba term (for two-electron quantum dot system). It can significantly modify the electron energy spectrum for InAs semiconductor quantum dots built in the GaAs matrix. The energy state spin-splitting is strongly dependent on the dot size and reaches an experimentally measurable magnitude for relatively small dots. In addition, we have found the Coulomb interaction and the spin-splitting are suppressed in quantum dots with small height. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1140/epjb/e2002-00250-6 | en_US |
dc.identifier.journal | EUROPEAN PHYSICAL JOURNAL B | en_US |
dc.citation.volume | 28 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 475 | en_US |
dc.citation.epage | 481 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 電子與資訊研究中心 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Microelectronics and Information Systems Research Center | en_US |
dc.identifier.wosnumber | WOS:000178006900010 | - |
dc.citation.woscount | 7 | - |
Appears in Collections: | Articles |
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