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dc.contributor.authorLi, Yen_US
dc.contributor.authorVoskoboynikoven_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorTretyak, Oen_US
dc.date.accessioned2014-12-08T15:42:07Z-
dc.date.available2014-12-08T15:42:07Z-
dc.date.issued2002-08-01en_US
dc.identifier.issn1434-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1140/epjb/e2002-00250-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/28614-
dc.description.abstractIn this article we study the impact of the spin-orbit interaction on the electron quantum confinement for narrow gap semiconductor quantum dots. The model formulation includes: (1) the effective one-band Hamiltonian approximation; (2) the position- and energy-dependent quasi-particle effective mass approximation; (3) the finite hard wall confinement potential; and (4) the spin-dependent Ben Daniel-Duke boundary conditions. The Hartree-Fock approximation is also utilized for evaluating the characteristics of a two-electron quantum dot system. In our calculation, we describe the spin-orbit interaction which comes from both the spin-dependent boundary conditions and the Rashba term (for two-electron quantum dot system). It can significantly modify the electron energy spectrum for InAs semiconductor quantum dots built in the GaAs matrix. The energy state spin-splitting is strongly dependent on the dot size and reaches an experimentally measurable magnitude for relatively small dots. In addition, we have found the Coulomb interaction and the spin-splitting are suppressed in quantum dots with small height.en_US
dc.language.isoen_USen_US
dc.titleElectron energy state spin-splitting in 3D cylindrical semiconductor quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1140/epjb/e2002-00250-6en_US
dc.identifier.journalEUROPEAN PHYSICAL JOURNAL Ben_US
dc.citation.volume28en_US
dc.citation.issue4en_US
dc.citation.spage475en_US
dc.citation.epage481en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電子與資訊研究中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentMicroelectronics and Information Systems Research Centeren_US
dc.identifier.wosnumberWOS:000178006900010-
dc.citation.woscount7-
Appears in Collections:Articles


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