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dc.contributor.authorTseng, CHen_US
dc.contributor.authorLin, CWen_US
dc.contributor.authorTeng, THen_US
dc.contributor.authorChang, TKen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:42:09Z-
dc.date.available2014-12-08T15:42:09Z-
dc.date.issued2002-08-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1101(02)00046-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/28644-
dc.description.abstractThe KrF excimer laser annealing of phosphorous implanted polycrystalline silicon (poly-Si) films had been investigated completely. Resistors were fabricated to measure sheet resistance of poly-Si film. The interference effect, heat absorption of capping oxide as well as transformation of poly-Si grain size during laser annealing were reported. Depending on the carrier concentrations, poly-Si exhibits different sheet resistance behavior when the excimer laser fluence is higher than the full-melt threshold fluence. The sheet resistance of poly-Si film has an abnormal increase from 5 x 10(4) to 4 x 10(6) Q/square when the excimer laser energy is higher than full-melt threshold energy. (C) 2002 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectexcimer laser annealingen_US
dc.subjectdopant activationen_US
dc.subjectpolycrystalline silicon thin film transistoren_US
dc.subjectactive-matrix liquid crystal displayen_US
dc.titleStudy on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0038-1101(02)00046-1en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume46en_US
dc.citation.issue8en_US
dc.citation.spage1085en_US
dc.citation.epage1090en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000177094400003-
Appears in Collections:Conferences Paper


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