Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Shieh, JM	en_US
dc.contributor.author	Chang, SC	en_US
dc.contributor.author	Dai, BT	en_US
dc.contributor.author	Feng, MS	en_US
dc.date.accessioned	2014-12-08T15:42:09Z	-
dc.date.available	2014-12-08T15:42:09Z	-
dc.date.issued	2002-08-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28646	-
dc.description.abstract	Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.	en_US
dc.language.iso	en_US	en_US
dc.subject	Cu	en_US
dc.subject	electroplating	en_US
dc.subject	2-aminobenzothiazole	en_US
dc.subject	polarization	en_US
dc.subject	RTA	en_US
dc.title	Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	8	en_US
dc.citation.spage	5104	en_US
dc.citation.epage	5107	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000180071800018	-
dc.citation.woscount	1	-
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