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dc.contributor.authorWang, CKen_US
dc.contributor.authorWu, HSen_US
dc.contributor.authorOu, NTen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:42:10Z-
dc.date.available2014-12-08T15:42:10Z-
dc.date.issued2002-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/28647-
dc.description.abstractOne integrated tungsten (W) chemical mechanical polishing (CMP) process characterization with wide production margin is developed for W plug application in sub-quarter micron technology. In this study, it is identified that donut-type function failure and reliability degradation on a designed application specific integrated circuit (ASIC) product vehicle result from an extra oxide layer atop the W plugs. W recess in via holes makes the plugs more vulnerable to oxide layer formation. CMP polish rate uniformity, layout dependence of via holes and queue-time (Q-time) control between WCMP and post-cleaning treatment are key parameters for preventing failure from interfacial oxide layer. Integrated optimization of WCMP process combined with W extrusion by a slight oxide polish immediately after WCMP is proposed to achieve a robust W plug process. Significant yield improvement from 45% to 82% in wafer edge region and 0% failure in three qualification lots in a product reliability test are demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectWCMPen_US
dc.subjectASICen_US
dc.subjectlayout dependenceen_US
dc.subjectW plugen_US
dc.subjectW extrusionen_US
dc.titleIntegrated tungsten chemical mechanical polishing process characterization for via plug interconnection in ultralarge scale integrated circuitsen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue8en_US
dc.citation.spage5120en_US
dc.citation.epage5124en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180071800021-
dc.citation.woscount2-
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