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dc.contributor.authorChang, KMen_US
dc.contributor.authorCheng, CCen_US
dc.contributor.authorChu, JYen_US
dc.date.accessioned2014-12-08T15:42:16Z-
dc.date.available2014-12-08T15:42:16Z-
dc.date.issued2002-07-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1479161en_US
dc.identifier.urihttp://hdl.handle.net/11536/28694-
dc.description.abstractElectron cyclotron resonance (ECR) reactive ion etch (RIE) was used to etch p-type GaN under a chlorine-based plasma. Rapid thermal annealing (RTA) and nitrogen plasma were used as post-RIE treatments to investigate the variation of Ni/Au contacts on p-GaN. RIE deteriorated the contact very much due to the induced nitrogen vacancies and damage on the p-GaN surface. The poor contact was improved by RTA treatment at 700degreesC for 3 min although the current-voltage curve was still nonlinear. The results from X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and grazing incidence X-ray diffraction measurements indicated that RTA at 700degreesC could reconstruct the ordered structure from the damaged p-GaN surface. Annealing at 500 or 900degreesC did not improve the contact due to the high oxygen content of the surface. ECR-N-2 plasma treatment could scarcely improve the contact. XPS and photoluminescence analyses revealed that the nitrogen plasma treatment increased the number of nitrogen vacancies as well as the nitrogen content of a p-GaN surface. These nitrogen atoms did not form tight bonds with GaN, and easily escaped from the surface by annealing. (C) 2002 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleThe variation of ohmic contacts and surface characteristics on p-GaN induced by reactive ion etchingen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1479161en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume149en_US
dc.citation.issue7en_US
dc.citation.spageG367en_US
dc.citation.epageG369en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176251600047-
dc.citation.woscount14-
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