Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lo, CL | en_US |
dc.contributor.author | Duh, JG | en_US |
dc.contributor.author | Chiou, BS | en_US |
dc.date.accessioned | 2014-12-08T15:42:16Z | - |
dc.date.available | 2014-12-08T15:42:16Z | - |
dc.date.issued | 2002-07-01 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.1482770 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28696 | - |
dc.description.abstract | Y2O2S: Eu phosphors doped with different concentrations of Eu were fabricated by a high-temperature flux fusion method. For applications in field emission displays, phosphor powders were electrophoretically deposited on an indium-tin oxide coated glass substrate to form a phosphor screen. Cathodoluminescence properties of phosphor screens were examined at a low excitation voltage of 5 kV in a high-vacuum chamber (5 x 10(-8) Torr), and characteristics of Y2O2S: Eu phosphors, including brightness and wavelength data, are presented and discussed. The red emission brightness for the Y2O2S: Eu phosphor screens can be significantly improved by adjustment of the Eu additions, which decrease the x coordinate slightly, while having no significant influence on the color performance. Considering the effects of Eu concentrations on red light emission spectra and brightness for Y2O2S: Eu phosphor screens, it is found that brightness for Y2O2S: Eu phosphor screens could be obtained up to 120 cd/m(2) with chromaticity of x = 0.63 and y = 0.36, and the Eu dopant concentration is suggested to be in the range 6-7.5 wt %. (C) 2002 The Electrochemical Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Low-voltage cathodoluminescence properties of the Y2O2S : Eu red light emitting phosphor screen in field-emission environments | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.1482770 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 149 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | H129 | en_US |
dc.citation.epage | H133 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000176251600061 | - |
dc.citation.woscount | 9 | - |
Appears in Collections: | Articles |
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