標題: | Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors |
作者: | Peng, DZ Chang, TC Zan, HW Huang, TY Chang, CY Liu, PT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 24-六月-2002 |
摘要: | In this letter, the characteristics and reliability of laser-activated polycrystalline silicon thin-film transistors (poly-Si TFTs) have been investigated by stressing the devices under V-ds=12 V and V-gs=15 V. In comparison with traditional furnace-activated poly-Si TFTs, the leakage current is relatively large for laser-activated poly-Si TFTs. Further, while the degradation rates of threshold voltage and subthreshold swing are comparable to those of traditional furnace-activated TFTs, the post-stress leakage and on/off current ratio for laser-activated poly-Si TFTs degrade much faster than those of furnace-activated counterparts. The laser activation modifies the grain structure between the drain and the channel region, and causes grain discontinuity extending from the drain to the channel region. As a result, an inferior reliability with extra trap state density and larger leakage current was observed in the laser-activated poly-Si TFTs. (C) 2002 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1489096 http://hdl.handle.net/11536/28713 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1489096 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 80 |
Issue: | 25 |
起始頁: | 4780 |
結束頁: | 4782 |
顯示於類別: | 期刊論文 |