Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsu, YK | en_US |
dc.contributor.author | Wang, JJ | en_US |
dc.contributor.author | Chang, CS | en_US |
dc.contributor.author | Wang, SC | en_US |
dc.date.accessioned | 2014-12-08T15:42:22Z | - |
dc.date.available | 2014-12-08T15:42:22Z | - |
dc.date.issued | 2002-06-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.41.3854 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28773 | - |
dc.description.abstract | The feasibility of adopting two methods to synthesizing the bulk crystal of beta-FeSi2, was examined: one involving two-step Bridgmann growth with a three-zone furnace and another invoking melting growth with a single zone furnace, As-grown iron disilicides were annealed in the furnaces at different temperatures for various durations, Experimental result,; indicate that a larger beta-FeSi, crystal can be obtained using the two-step fast Bridgmann growth method kith post-annealing at 1073 K for 300h. Fast cooling and adding some copper impurities to the raw materials were found to promote the growth of beta-FeSi2. The iron disilicide crystal. with a large contribution from the 8 phase, supported a higher thermoelectric power. A thermoelectric power of 450 muV/K was obtained at 300-900 K for the sample with copper doping The energy hand gap of beta-FeSi2 samples was about 0.82-0.88 eV. determined by measuring the temperature-dependent resistivity. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | beta-FeSi2 | en_US |
dc.subject | Bridgmann growth | en_US |
dc.subject | thermoelectric power | en_US |
dc.title | Synthesis of bulk beta-FeSi2 crystal | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.41.3854 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.issue | 6A | en_US |
dc.citation.spage | 3854 | en_US |
dc.citation.epage | 3859 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000177169500049 | - |
dc.citation.woscount | 3 | - |
Appears in Collections: | Articles |
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