標題: | Synthesis of bulk beta-FeSi2 crystal |
作者: | Hsu, YK Wang, JJ Chang, CS Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | beta-FeSi2;Bridgmann growth;thermoelectric power |
公開日期: | 1-Jun-2002 |
摘要: | The feasibility of adopting two methods to synthesizing the bulk crystal of beta-FeSi2, was examined: one involving two-step Bridgmann growth with a three-zone furnace and another invoking melting growth with a single zone furnace, As-grown iron disilicides were annealed in the furnaces at different temperatures for various durations, Experimental result,; indicate that a larger beta-FeSi, crystal can be obtained using the two-step fast Bridgmann growth method kith post-annealing at 1073 K for 300h. Fast cooling and adding some copper impurities to the raw materials were found to promote the growth of beta-FeSi2. The iron disilicide crystal. with a large contribution from the 8 phase, supported a higher thermoelectric power. A thermoelectric power of 450 muV/K was obtained at 300-900 K for the sample with copper doping The energy hand gap of beta-FeSi2 samples was about 0.82-0.88 eV. determined by measuring the temperature-dependent resistivity. |
URI: | http://dx.doi.org/10.1143/JJAP.41.3854 http://hdl.handle.net/11536/28773 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.41.3854 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 41 |
Issue: | 6A |
起始頁: | 3854 |
結束頁: | 3859 |
Appears in Collections: | Articles |
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