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dc.contributor.authorChin, YLen_US
dc.contributor.authorChiou, BSen_US
dc.contributor.authorWu, WFen_US
dc.date.accessioned2014-12-08T15:42:26Z-
dc.date.available2014-12-08T15:42:26Z-
dc.date.issued2002-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.3057en_US
dc.identifier.urihttp://hdl.handle.net/11536/28810-
dc.description.abstractThe effects of a Ta barrier layer on electromigration and stress migration of Cu films are investigated. The Ta barrier layer enhances both the (111) texture and the median grain size of the annealed Cu films. At 225degreesC, the electromigration mean time to failure (225degreesC-MTF) of Ta/Cu/Ta multilayer interconnects is about two times longer than that of Cu monolayer interconnects. After 500 thermal cycles, the 225degreesC-MTF of Ta/Cu/Ta multilayer interconnects does not change and is about three times longer than that of Cu monolayer interconnects. The activation energy E-a of electromigration of Ta/Cu/Ta multilayer interconnects is 0.77 eV, which is higher than that of Cu monolayer interconnects (0.65 eV). Since the Ta/Cu/Ta specimen has enhanced crystallographic texture and larger grain size. it has both higher electromigration endurance and thermal stress resistance than Cu. However. the measured MTF is shorter than that predicted by an equation proposed by Vaidya and Sinha [Thin Solid Films 75 (1981) 253]. The shorter MTF and smaller E-a values for the Ta/Cu/Ta multilayer compared to the predicted ones are due to the weak Ta/Cu interface, A lifetime of 100 years is predicted for Ta/Cu/Ta multilayer interconnects with and without 500 thermal cycle stress.en_US
dc.language.isoen_USen_US
dc.subjectCu filmsen_US
dc.subjectbarrier layeren_US
dc.subjectmicrostructureen_US
dc.subjectreliabilityen_US
dc.subjectinterconnecten_US
dc.subjectelectromigrationen_US
dc.subjectTa/Cu/Ta multilayeren_US
dc.titleEffect of the tantalum barrier layer on the electromigration and stress migration resistance of physical-vapor-deposited copper interconnecten_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.41.3057en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue5Aen_US
dc.citation.spage3057en_US
dc.citation.epage3064en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176515700057-
dc.citation.woscount16-
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