完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, CFen_US
dc.contributor.authorLin, KCen_US
dc.date.accessioned2014-12-08T15:42:27Z-
dc.date.available2014-12-08T15:42:27Z-
dc.date.issued2002-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.2881en_US
dc.identifier.urihttp://hdl.handle.net/11536/28833-
dc.description.abstractPulse-and DC-plated copper films on wafers were investigated with respect to their applicability as advanced interconnect materials. Pulse frequency was varied to determine its influence on the topography, grain size, and electrical resistivity of electroplated copper films. Morphology and scanning electron microscopy (SEM) studies were conducted on these samples. Smooth and dense coatings were obtained at the optimal frequency of 100 Hz, which displayed the smallest electrical resistance. The leveling capacity of submicron features was also optimized at this frequency.en_US
dc.language.isoen_USen_US
dc.subjectelectrodepositionen_US
dc.subjectsemiconductoren_US
dc.subjectpulseen_US
dc.subjectfrequencyen_US
dc.titleEffect of pulse frequency on leveling and resistivity of copper coatingsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.41.2881en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue5Aen_US
dc.citation.spage2881en_US
dc.citation.epage2885en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000176515700017-
dc.citation.woscount2-
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