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dc.contributor.authorLi, YMen_US
dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorTretyak, Oen_US
dc.date.accessioned2014-12-08T15:42:29Z-
dc.date.available2014-12-08T15:42:29Z-
dc.date.issued2002-05-01en_US
dc.identifier.issn0129-1831en_US
dc.identifier.urihttp://dx.doi.org/10.1142/S0129183102003899en_US
dc.identifier.urihttp://hdl.handle.net/11536/28851-
dc.description.abstractAn impact of the spin-orbit interaction on the electron quantum confinement is considered theoretically for narrow gap semiconductor cylindrical quantum dots. To study the phenomena for InAs quantum dot embedded into GaAs semiconductor matrix, the effective one electronic band Hamiltonian, the energy position dependent electron effective mass approximation, and the spin-dependent Ben Daniel-Duke boundary conditions axe considered, formulated and solved numerically. To solve the nonlinear Schrodinger equation, we propose a nonlinear iterative algorithm. This calculation algorithm not only converges for all simulation cases but also has a good convergent rate. With the developed quantum dot simulator, we study the effect of the spin-orbit interaction for narrow gap InAs/GaAs semiconductor cylindrical quantum dots. From the numerical calculations, it has been observed that the spin-orbit interaction leads to a sizeable spin-splitting of the electron energy states with nonzero angular momentum. Numerical evidence is presented to show the splitting result is strongly dependent on the quantum dot size.en_US
dc.language.isoen_USen_US
dc.subjectInAs/GaAs semiconductor quantum doten_US
dc.subjectelectronic structureen_US
dc.subjectenergy level spin splittingen_US
dc.subjectcomputer simulationen_US
dc.subjectnumerical methodsen_US
dc.titleA computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1142/S0129183102003899en_US
dc.identifier.journalINTERNATIONAL JOURNAL OF MODERN PHYSICS Cen_US
dc.citation.volume13en_US
dc.citation.issue4en_US
dc.citation.spage453en_US
dc.citation.epage463en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000176719400002-
dc.citation.woscount5-
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