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dc.contributor.authorChen, CCen_US
dc.contributor.authorChen, HCen_US
dc.contributor.authorKuan, CHen_US
dc.contributor.authorLin, SDen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:42:32Z-
dc.date.available2014-12-08T15:42:32Z-
dc.date.issued2002-04-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1466537en_US
dc.identifier.urihttp://hdl.handle.net/11536/28877-
dc.description.abstractA multicolor infrared photodetector was realized with two superlattices separated by a blocking barrier. The photoresponse is switchable between 7.5-12 and 6-8.5 mum by the bias polarity, and is also tunable by the bias magnitude in each wavelength regime. In addition, our detector exhibits advantages including little temperature dependence of the spectral response and the same order of responsivity in the two wavelength regimes. The measured peak responsivities in the two regimes are 117 mA/W at 9.8 mum under 1 V and 129 mA/V at 7.4 mum under -0.8 V, respectively. Also, the detectivities are comparable with the conventional multistack detector. The zero background peak detectivities are 2.3x10(10) cm Hz(0.5)/W at 50 K and 9.8 mum under 0.7 V, and 8.7x10(10) cm Hz(0.5)/W at 70 K and 7.4 mum under -0.7 V. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleMulticolor infrared detection realized with two distinct superlattices separated by a blocking barrieren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1466537en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume80en_US
dc.citation.issue13en_US
dc.citation.spage2251en_US
dc.citation.epage2253en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000174623300005-
dc.citation.woscount21-
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