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dc.contributor.authorChen, YFen_US
dc.contributor.authorLan, YPen_US
dc.date.accessioned2014-12-08T15:42:32Z-
dc.date.available2014-12-08T15:42:32Z-
dc.date.issued2002-04-01en_US
dc.identifier.issn0946-2171en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s003400200814en_US
dc.identifier.urihttp://hdl.handle.net/11536/28879-
dc.description.abstractComparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers.en_US
dc.language.isoen_USen_US
dc.titleComparison between c-cut and A-cut Nd : YVO4 lasers passively Q-switched with a Cr4+: YAG saturable absorberen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s003400200814en_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.citation.volume74en_US
dc.citation.issue4-5en_US
dc.citation.spage415en_US
dc.citation.epage418en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000174854800018-
dc.citation.woscount72-
Appears in Collections:Articles


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