Comparison between c-cut and A-cut Nd : YVO4 lasers passively Q-switched with a Cr4+: YAG saturable absorber

doi:10.1007/s003400200814

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Lan, YP	en_US
dc.date.accessioned	2014-12-08T15:42:32Z	-
dc.date.available	2014-12-08T15:42:32Z	-
dc.date.issued	2002-04-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s003400200814	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28879	-
dc.description.abstract	Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers.	en_US
dc.language.iso	en_US	en_US
dc.title	Comparison between c-cut and A-cut Nd : YVO4 lasers passively Q-switched with a Cr4+: YAG saturable absorber	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s003400200814	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	74	en_US
dc.citation.issue	4-5	en_US
dc.citation.spage	415	en_US
dc.citation.epage	418	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000174854800018	-
dc.citation.woscount	72	-
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