標題: Effect of shape and size on electron transition energies of InAs semiconductor quantum dots
作者: Li, YM
Voskoboynikov, O
Lee, CP
Sze, SM
Tretyak, O
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: quantum dots;electron energy states;magnetic field;diamagnetic shift
公開日期: 1-四月-2002
摘要: We present a theoretical study of the electron energy states in three-dimensional narrow gap semiconductor quantum (Jots with different shapes under an external magnetic field. The problem is solved by using the effective one-electronic-band Hamiltonian, the energy- and position-dependent electron effective mass approximation and the Ben Daniel-Duke boundary condition. We investigate small InAs/GaAs quantum dots with disk, lenticular, and conical shapes. Electron energy dependence on volume is expressed as V-gamma where the exponent gamma depends on the dot shapes and can vary over a wide range. The most stable against the dot size deviations (among dots of the same base radius) is the energy spectra of the conical dots. In addition, this type of dot also has the weakest diamagnetic shift. Contrarily, quantum dots with cylindrical shapes show a wide deviation in energy and a relatively strong diamagnetic shift.
URI: http://dx.doi.org/10.1143/JJAP.41.2698
http://hdl.handle.net/11536/28894
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.2698
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 4B
起始頁: 2698
結束頁: 2700
顯示於類別:會議論文


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