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dc.contributor.authorLi, YMen_US
dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorTretyak, Oen_US
dc.date.accessioned2014-12-08T15:42:33Z-
dc.date.available2014-12-08T15:42:33Z-
dc.date.issued2002-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.2698en_US
dc.identifier.urihttp://hdl.handle.net/11536/28894-
dc.description.abstractWe present a theoretical study of the electron energy states in three-dimensional narrow gap semiconductor quantum (Jots with different shapes under an external magnetic field. The problem is solved by using the effective one-electronic-band Hamiltonian, the energy- and position-dependent electron effective mass approximation and the Ben Daniel-Duke boundary condition. We investigate small InAs/GaAs quantum dots with disk, lenticular, and conical shapes. Electron energy dependence on volume is expressed as V-gamma where the exponent gamma depends on the dot shapes and can vary over a wide range. The most stable against the dot size deviations (among dots of the same base radius) is the energy spectra of the conical dots. In addition, this type of dot also has the weakest diamagnetic shift. Contrarily, quantum dots with cylindrical shapes show a wide deviation in energy and a relatively strong diamagnetic shift.en_US
dc.language.isoen_USen_US
dc.subjectquantum dotsen_US
dc.subjectelectron energy statesen_US
dc.subjectmagnetic fielden_US
dc.subjectdiamagnetic shiften_US
dc.titleEffect of shape and size on electron transition energies of InAs semiconductor quantum dotsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.41.2698en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue4Ben_US
dc.citation.spage2698en_US
dc.citation.epage2700en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000175703200092-
Appears in Collections:Conferences Paper


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