A NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITY

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHOU, JW	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	HO, LT	en_US
dc.contributor.author	KO, J	en_US
dc.contributor.author	HSUE, P	en_US
dc.date.accessioned	2014-12-08T15:04:23Z	-
dc.date.available	2014-12-08T15:04:23Z	-
dc.date.issued	1993-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2891	-
dc.description.abstract	A new SCD-LDD (Surface Counter Doped LDD) structure is proposed. This structure introduces an additional oblique BF2 implant after nLDD implant, which counter-dopes the nLDD surface concentration near the gate edge. As a result, the lateral electric fields beneath the gate were reduced and the saturation drain current was conducted downward away from the maximum electric fields, resulting in a substantial enhancement of hot carrier reliability due to suppression of hot carrier generation and injection with this structure.	en_US
dc.language.iso	en_US	en_US
dc.subject	DRAIN ENGINEERING	en_US
dc.subject	LIGHTLY DOPED DRAIN (LDD)	en_US
dc.subject	OBLIQUE IMPLANTATION	en_US
dc.subject	SURFACE COUNTER DOPED LDD (SCD-LDD)	en_US
dc.subject	HOT CARRIER RELIABILITY	en_US
dc.title	A NEW DRAIN ENGINEERING STRUCTURE-SCD-LDD (SURFACE COUNTER DOPED LDD) FOR IMPROVED HOT-CARRIER RELIABILITY	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	9A	en_US
dc.citation.spage	L1203	en_US
dc.citation.epage	L1205	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1993LX13300007	-
dc.citation.woscount	1	-
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