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dc.contributor.authorLu, TCen_US
dc.contributor.authorShieh, HMen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:42:38Z-
dc.date.available2014-12-08T15:42:38Z-
dc.date.issued2002-03-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1459763en_US
dc.identifier.urihttp://hdl.handle.net/11536/28930-
dc.description.abstractReal index-guided buried ridge InGaAlP 650 nm band lasers with p(+)-n(+) buried tunnel junctions are demonstrated. Located on top of the buried ridges, the tunnel junctions, made of InGaAs/GaAs superlattices with modulation doping, were introduced as the current injection window areas. The large band gap In0.5Al0.5P layers were directly regrown around the ridges using metalorganic chemical vapor deposition to serve as the current blocking layers. Real index optical waveguiding in the lateral direction was also provided by the smaller refractive index of In0.5Al0.5P layers. The lasers showed lower threshold current and higher slope efficiency compared to conventional complex index-guided InGaAlP lasers with GaAs current blocking layers, and had low internal loss of about 5.4 cm(-1). (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleReal index-guided InGaAlP red lasers with buried tunnel junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1459763en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume80en_US
dc.citation.issue11en_US
dc.citation.spage1882en_US
dc.citation.epage1884en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000174363300009-
dc.citation.woscount4-
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