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dc.contributor.authorTsai, CLen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorLin, CLen_US
dc.date.accessioned2014-12-08T15:42:39Z-
dc.date.available2014-12-08T15:42:39Z-
dc.date.issued2002-03-11en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1459109en_US
dc.identifier.urihttp://hdl.handle.net/11536/28941-
dc.description.abstractVertically well-aligned, high-aspect-ratio carbon nanotips have been directly grown upward on the gated device structure with 4 mum gate aperture. The nanotips rapidly nucleate and grow without any catalyst. In addition, selected area deposition of nanotips is achieved by using a Pt layer as inhibitor in the bias-assisted microwave plasma chemical vapor deposition. The field emission current of nanotips on the gated structure is 154 muA (at a gate-to-cathode voltage of V-gc=50 V). This results from the following reasons: (i) short gate-tips spacing, (ii) small gate aperture, and (iii) the high-aspect ratio of nanotips. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleField emission from well-aligned carbon nanotips grown in a gated device structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1459109en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume80en_US
dc.citation.issue10en_US
dc.citation.spage1821en_US
dc.citation.epage1822en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000174181800047-
dc.citation.woscount17-
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