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dc.contributor.authorHsu, JWen_US
dc.contributor.authorChiu, SYen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorShih, HCen_US
dc.date.accessioned2014-12-08T15:42:45Z-
dc.date.available2014-12-08T15:42:45Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1449954en_US
dc.identifier.urihttp://hdl.handle.net/11536/28977-
dc.description.abstractThe removal selectivity control of aluminum and titanium metal barrier during aluminum chemical mechanical polishing in the Damascene process is known to be critical for surface planarity without metal dishing and dielectric erosion. Unfortunately, the electrochemical behaviors of aluminum and titanium are dissimilar, as one may expect. In this study, in situ electrochemical impedance spectroscopy was carried out to investigate the influences of H(2)O(2) concentration, slurry pH, and metal oxide formation through the passivation on aluminum and titanium. As H(2)O(2) concentration increases, the measured impedance of aluminum and titanium decreases, or the oxidation rates of these two metals are enhanced upon increasing the oxidizer concentration. As the slurry pH increases, the removal rate of polished titanium increases, but it decreases for polished aluminum. The removal rate of titanium was limited to its oxidation rate and aluminum was limited to its oxide dissolution rate. (C) 2002 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleThe removal selectivity of titanium and aluminum in chemical mechanical planarizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1449954en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume149en_US
dc.citation.issue3en_US
dc.citation.spageG204en_US
dc.citation.epageG208en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000174211100051-
dc.citation.woscount3-
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