Oxide-confined vertical-cavity surface-emitting lasers pumped Nd : YVO4 microchip lasers

doi:10.1109/68.986783

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lan, YP	en_US
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Huang, KF	en_US
dc.contributor.author	Lai, HC	en_US
dc.contributor.author	Pan, JS	en_US
dc.date.accessioned	2014-12-08T15:42:45Z	-
dc.date.available	2014-12-08T15:42:45Z	-
dc.date.issued	2002-03-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/68.986783	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28979	-
dc.description.abstract	In this letter, we demonstrate an experimental study of using a large area oxide-confined vertical-cavity surface-emitting laser (VCSEL) to pump a Nd:YVO4 microchip laser. The maximum output power of 1.2 mW in TEM00 mode is obtained with a pump power of 8.2 mW. Experimental results show that the complex transverse modal behavior of VCSELs in the higher injection current may cause an impediment of power scaling.	en_US
dc.language.iso	en_US	en_US
dc.subject	oxide-confined	en_US
dc.subject	solid state lasers	en_US
dc.subject	transverse mode	en_US
dc.subject	vertical-cavity lasers	en_US
dc.title	Oxide-confined vertical-cavity surface-emitting lasers pumped Nd : YVO4 microchip lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/68.986783	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	14	en_US
dc.citation.issue	3	en_US
dc.citation.spage	272	en_US
dc.citation.epage	274	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000174081500004	-
dc.citation.woscount	14	-
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