完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lan, YP | en_US |
dc.contributor.author | Chen, YF | en_US |
dc.contributor.author | Huang, KF | en_US |
dc.contributor.author | Lai, HC | en_US |
dc.contributor.author | Pan, JS | en_US |
dc.date.accessioned | 2014-12-08T15:42:45Z | - |
dc.date.available | 2014-12-08T15:42:45Z | - |
dc.date.issued | 2002-03-01 | en_US |
dc.identifier.issn | 1041-1135 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/68.986783 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28979 | - |
dc.description.abstract | In this letter, we demonstrate an experimental study of using a large area oxide-confined vertical-cavity surface-emitting laser (VCSEL) to pump a Nd:YVO4 microchip laser. The maximum output power of 1.2 mW in TEM00 mode is obtained with a pump power of 8.2 mW. Experimental results show that the complex transverse modal behavior of VCSELs in the higher injection current may cause an impediment of power scaling. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | oxide-confined | en_US |
dc.subject | solid state lasers | en_US |
dc.subject | transverse mode | en_US |
dc.subject | vertical-cavity lasers | en_US |
dc.title | Oxide-confined vertical-cavity surface-emitting lasers pumped Nd : YVO4 microchip lasers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/68.986783 | en_US |
dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
dc.citation.volume | 14 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 272 | en_US |
dc.citation.epage | 274 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000174081500004 | - |
dc.citation.woscount | 14 | - |
顯示於類別: | 期刊論文 |