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dc.contributor.authorChang, HLen_US
dc.contributor.authorLin, CHen_US
dc.contributor.authorKuo, CTen_US
dc.date.accessioned2014-12-08T15:42:45Z-
dc.date.available2014-12-08T15:42:45Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0925-9635(01)00601-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/28983-
dc.description.abstractCatalyst growth carbon and Si-C-N nanotubes have been synthesized successfully by microwave plasma chemical vapor deposition (MPCVD) method using CH4 + H-2 or CH4 + N-2 as gas sources, Si columns as additional Si solid sources, and Fe, Fe-Y, Co-Ni as catalysts. Nanotubes consisting of Si, C and N were made under process gases of CH4 + N-2, and with or without additional Si columns. Well-aligned and nested nanotubes were observed dependent on the catalyst materials. Besides, Si-C-N nanotubes were observed as bamboo-Eke structure. The as-grown nanotubes were purified in an air furnace to investigate their CL signal shift for potential application involving blue light emission. The field emission results indicate that the emission current densities can be above 10 mA/cm(2) at 10 V/mum, and aligned nanotubes belong to better current stability at a constant electric field than nested nanotubes. Nanotubes with a low I-D/I-G ratio (=0.23) via Raman analysis are achieved. The mechanisms of formation for carbon nanotubes and Si-C-N nanotubes are also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectchemical vapor depositionen_US
dc.subjectfield emissionen_US
dc.subjectTEMen_US
dc.titleField emission, structure, cathodoluminescence and formation studies of carbon and Si-C-N nanotubesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0925-9635(01)00601-Xen_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume11en_US
dc.citation.issue3-6en_US
dc.citation.spage793en_US
dc.citation.epage798en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000176046300101-
Appears in Collections:Conferences Paper


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