完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, HL | en_US |
dc.contributor.author | Lin, CH | en_US |
dc.contributor.author | Kuo, CT | en_US |
dc.date.accessioned | 2014-12-08T15:42:45Z | - |
dc.date.available | 2014-12-08T15:42:45Z | - |
dc.date.issued | 2002-03-01 | en_US |
dc.identifier.issn | 0925-9635 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0925-9635(01)00601-X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28983 | - |
dc.description.abstract | Catalyst growth carbon and Si-C-N nanotubes have been synthesized successfully by microwave plasma chemical vapor deposition (MPCVD) method using CH4 + H-2 or CH4 + N-2 as gas sources, Si columns as additional Si solid sources, and Fe, Fe-Y, Co-Ni as catalysts. Nanotubes consisting of Si, C and N were made under process gases of CH4 + N-2, and with or without additional Si columns. Well-aligned and nested nanotubes were observed dependent on the catalyst materials. Besides, Si-C-N nanotubes were observed as bamboo-Eke structure. The as-grown nanotubes were purified in an air furnace to investigate their CL signal shift for potential application involving blue light emission. The field emission results indicate that the emission current densities can be above 10 mA/cm(2) at 10 V/mum, and aligned nanotubes belong to better current stability at a constant electric field than nested nanotubes. Nanotubes with a low I-D/I-G ratio (=0.23) via Raman analysis are achieved. The mechanisms of formation for carbon nanotubes and Si-C-N nanotubes are also discussed. (C) 2002 Elsevier Science B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | chemical vapor deposition | en_US |
dc.subject | field emission | en_US |
dc.subject | TEM | en_US |
dc.title | Field emission, structure, cathodoluminescence and formation studies of carbon and Si-C-N nanotubes | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0925-9635(01)00601-X | en_US |
dc.identifier.journal | DIAMOND AND RELATED MATERIALS | en_US |
dc.citation.volume | 11 | en_US |
dc.citation.issue | 3-6 | en_US |
dc.citation.spage | 793 | en_US |
dc.citation.epage | 798 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000176046300101 | - |
顯示於類別: | 會議論文 |