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dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorMor, YSen_US
dc.contributor.authorChen, CWen_US
dc.contributor.authorTsai, TMen_US
dc.contributor.authorChu, CJen_US
dc.contributor.authorPan, FMen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:42:46Z-
dc.date.available2014-12-08T15:42:46Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1445644en_US
dc.identifier.urihttp://hdl.handle.net/11536/28990-
dc.description.abstractPhotoresist stripping with oxygen plasma ashing destroys numerous functional groups in porous organosilicate glasses (OSGs), This impact makes the porous OSG relatively hydrophilic and causes low-k dielectric degradation, To mitigate these issues, various strategies are investigated to enhance oxygen plasma resistance of the porous OSG. These include physical and chemical procedures. Both structural and electrical analyses are used to determine their efficiency. In addition, an optimum prescription that consists of H, plasma and chemical trimethylchlorosilane treatment is developed in this work. The enhancement of oxygen plasma resistance can provide the porous OSG for practical application in the multilevel interconnection. (C) 2002 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleEffective strategy for porous organosilicate to suppress oxygen ashing damageen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1445644en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume5en_US
dc.citation.issue3en_US
dc.citation.spageG11en_US
dc.citation.epageG14en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000174012300015-
dc.citation.woscount17-
Appears in Collections:Articles