Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, CC | en_US |
dc.contributor.author | Chen, HC | en_US |
dc.contributor.author | Hsu, MC | en_US |
dc.contributor.author | Hsieh, WH | en_US |
dc.contributor.author | Kuan, CH | en_US |
dc.contributor.author | Wang, SY | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.date.accessioned | 2014-12-08T15:42:48Z | - |
dc.date.available | 2014-12-08T15:42:48Z | - |
dc.date.issued | 2002-02-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1430887 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29017 | - |
dc.description.abstract | An infrared photodetector that contains a superlattice structure and a blocking barrier was investigated. The photodetector shows advantages including a low operating voltage (<0.7 V), wide detection bandwidth, flexible miniband engineering, and in particular, voltage-tunable spectral responsivity. The blocking barrier not only prohibits the dark current but also acts as a high-pass energy filter to tune the spectral responsivity. The zero background peak detectivity of our detector is 3.7x10(9) cm Hz(0.5)/W (9.7 mum) at -0.5 V and 2.2x10(10) cm Hz(0.5)/W (6.7 mum) at -0.1 V. Since the spectral responsivity at different biases is independent, temperature sensing is feasible by taking the ratio of the measured photocurrent at different biases. A demonstration of temperature sensing by using our superlattice infrared photodetector with a blocking barrier is also shown in this article. Those results show the superlattice is a simple and efficient structure for the design of a multicolor infrared photodetector. (C) 2002 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Performance and application of a superlattice infrared photodetector with a blocking barrier | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1430887 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 91 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 943 | en_US |
dc.citation.epage | 948 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000173418500008 | - |
dc.citation.woscount | 5 | - |
Appears in Collections: | Articles |
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