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dc.contributor.authorChao, CWen_US
dc.contributor.authorHu, GRen_US
dc.contributor.authorWu, YSen_US
dc.contributor.authorChen, YCen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:42:48Z-
dc.date.available2014-12-08T15:42:48Z-
dc.date.issued2002-02-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1435562en_US
dc.identifier.urihttp://hdl.handle.net/11536/29021-
dc.description.abstractElectrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall of the amorphous-silicon islands. After samples were annealed at 530degreesC, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of similar to55degrees from the edge. The direction of the primary grain growth was along [211] and the secondary growth occurred along [011] direction. (C) 2001 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleElectrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1435562en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spageC31en_US
dc.citation.epageC32en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000173246600009-
dc.citation.woscount2-
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