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dc.contributor.authorChao, TSen_US
dc.contributor.authorLee, LYen_US
dc.date.accessioned2014-12-08T15:42:49Z-
dc.date.available2014-12-08T15:42:49Z-
dc.date.issued2002-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.L124en_US
dc.identifier.urihttp://hdl.handle.net/11536/29027-
dc.description.abstractNickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 x 10(-9) A/cm(2), which represents 2-4 times reduction compared to conventional counterparts.en_US
dc.language.isoen_USen_US
dc.subjectnickelen_US
dc.subjectsilicideen_US
dc.subjectjunctionen_US
dc.subjectleakageen_US
dc.subjectnitrogenen_US
dc.titleReduction of nickel-silicided junction leakage by nitrogen ion implantationen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.41.L124en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume41en_US
dc.citation.issue2Aen_US
dc.citation.spageL124en_US
dc.citation.epageL126en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000173882700011-
dc.citation.woscount6-
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