Reduction of nickel-silicided junction leakage by nitrogen ion implantation

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DC 欄位	值	語言
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Lee, LY	en_US
dc.date.accessioned	2014-12-08T15:42:49Z	-
dc.date.available	2014-12-08T15:42:49Z	-
dc.date.issued	2002-02-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.41.L124	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29027	-
dc.description.abstract	Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 x 10(-9) A/cm(2), which represents 2-4 times reduction compared to conventional counterparts.	en_US
dc.language.iso	en_US	en_US
dc.subject	nickel	en_US
dc.subject	silicide	en_US
dc.subject	junction	en_US
dc.subject	leakage	en_US
dc.subject	nitrogen	en_US
dc.title	Reduction of nickel-silicided junction leakage by nitrogen ion implantation	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.41.L124	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	2A	en_US
dc.citation.spage	L124	en_US
dc.citation.epage	L126	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000173882700011	-
dc.citation.woscount	6	-
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