Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon

doi:10.1016/S0254-0584(01)00366-2

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lue, HT	en_US
dc.contributor.author	Tseng, CY	en_US
dc.contributor.author	Lue, JT	en_US
dc.date.accessioned	2014-12-08T15:42:52Z	-
dc.date.available	2014-12-08T15:42:52Z	-
dc.date.issued	2002-01-15	en_US
dc.identifier.issn	0254-0584	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0254-0584(01)00366-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29063	-
dc.description.abstract	This work includes addenda to the paper entitled photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon (PS) which was published in this journal. The readers can readily obtain the principal values of g(parallel to) and g(perpendicular to) from the de-convolution of the effective principal g-values of the spin resonance data measured at various rotating angles of the magnetic field and the crystal axes. (C) 2002 Elsevier Science B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	photoluminescence	en_US
dc.subject	electron paramagnetic resonance	en_US
dc.subject	porous silicon	en_US
dc.title	Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/S0254-0584(01)00366-2	en_US
dc.identifier.journal	MATERIALS CHEMISTRY AND PHYSICS	en_US
dc.citation.volume	73	en_US
dc.citation.issue	2-3	en_US
dc.citation.spage	310	en_US
dc.citation.epage	313	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000173252100032	-
dc.citation.woscount	0	-
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