完整後設資料紀錄
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dc.contributor.authorChen, SYen_US
dc.contributor.authorChou, CHen_US
dc.contributor.authorCheng, SYen_US
dc.date.accessioned2014-12-08T15:42:57Z-
dc.date.available2014-12-08T15:42:57Z-
dc.date.issued2002-01-01en_US
dc.identifier.issn0022-2461en_US
dc.identifier.urihttp://dx.doi.org/10.1023/A:1013178716012en_US
dc.identifier.urihttp://hdl.handle.net/11536/29095-
dc.description.abstractSince the shrinkage behavior of silver-based films has been correlated with the characteristics of oxide additives used, the relative role of metal oxides and metal-organic precursors in sintering shrinkage and microstructure evolution of silver films was investigated and compared in this work. Films with an oxide powder additive exhibit two-stage shrinkage behavior in contrast to one-stage continuous shrinkage, which occurs in silver films with metal-organic precursors, added. Furthermore, metal-organic precursors are less effective than metal oxide powders in reducing shrinkage of silver-based films. That can be reasonably explained that metal-organic precursors can be effectively decorated around silver powder to inhibit the sintering densification. The Zr-based organic precursor among the metal-organic precursors exhibits optimal retardation in sintering densification of silver film, which is probably interrelated to refractory characteristics of ZrO2. The unique conductivity and grain growth of silver film with 1.0 wt% tungsten-organic precursor added was possibly due to the partial dissolution of W into Ag. (C) 2002 Kluwer Academic Publishers.en_US
dc.language.isoen_USen_US
dc.titleEffect of metal oxide precursor on sintering shrinkage, microstructure evolution and electrical properties of silver-based pastesen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/A:1013178716012en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCEen_US
dc.citation.volume37en_US
dc.citation.issue1en_US
dc.citation.spage169en_US
dc.citation.epage175en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000172654500019-
dc.citation.woscount2-
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