Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Chu, Jung-Tang | en_US |
dc.contributor.author | Chen, Shih-Wei | en_US |
dc.contributor.author | Cheng, Bo-Siao | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:42:58Z | - |
dc.date.available | 2014-12-08T15:42:58Z | - |
dc.date.issued | 2008-08-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.47.6655 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29109 | - |
dc.description.abstract | The optical properties of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with two dielectric distributed Bragg reflectors were investigated under optically pumped operation. The laser emits blue-violet light at a wavelength of 414 nm at room temperature with a high spontaneous emission coupling factor (beta-factor) of 2 x 10(-2) and a linewidth of 0.25 nm. The optical gain was determined by the Hakki-Paoli method by measuring the photoluminescence spectra below threshold conditions. At room temperature, an optical gain of 2900 cm(-1) was obtained under threshold condition. The linewidth enhancement factor (alpha-factor) is estimated front the ratio of the wavelength and gain derivation with respect to the carrier density, and the alpha-factor at room temperature is estimated to be 2.8. Strong exciton-photon coupling in the microcavity was observed at room temperature. A 9 meV Rabi splitting with 60% peak-to-valley contrast was determined from the photoluminescence measurements. Emission spectra showing the evolution of anticrossing behavior were also observed. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | InGaN | en_US |
dc.subject | vertical-cavity surface-emitting lasers | en_US |
dc.subject | gain | en_US |
dc.subject | polariton | en_US |
dc.title | Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.47.6655 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 6655 | en_US |
dc.citation.epage | 6659 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000260003100006 | - |
Appears in Collections: | Conferences Paper |
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