標題: | Current-temperature characteristics of low-temperature-sputtered (Ba,Sr)TiO3 films post treated by rapid thermal annealing |
作者: | Shye, DC Chen, JS Kuo, MW Chou, BCS Jan, CK Wu, MF Chiou, BS Cheng, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | (Ba0.8Sr0.2)TiO3;rapid thermal annealing (RTA);NTCR;PTCR;Schottky emission;Heywang barrier |
公開日期: | 2002 |
摘要: | This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba0.8Sr0.2)TiO3 (BST) film post treated by rapid thermal annealing (RTA) in O-2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST/Pt multifilm. As the results, the current density of the RTA-treated BST film was greatly reduced owing to compensation of oxygen vacancies. The RTA-treated BST thin film biased at negative voltage exhibits a negative temperature-coefficient-resistivity (NTCR) behavior, but, intriguingly, that biased at positive voltage reveals a positive temperature-coefficient-resistivity (PTCR) behavior. According to the leakage current analysis, the Schottky emission dominates the negative biased current at upper interface, but the Heywang barrier scattering confines the positive biased current. |
URI: | http://hdl.handle.net/11536/29155 http://dx.doi.org/10.1080/10584580215416 |
ISSN: | 1058-4587 |
DOI: | 10.1080/10584580215416 |
期刊: | INTEGRATED FERROELECTRICS |
Volume: | 47 |
起始頁: | 217 |
結束頁: | 225 |
顯示於類別: | 會議論文 |