標題: Current-temperature characteristics of low-temperature-sputtered (Ba,Sr)TiO3 films post treated by rapid thermal annealing
作者: Shye, DC
Chen, JS
Kuo, MW
Chou, BCS
Jan, CK
Wu, MF
Chiou, BS
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: (Ba0.8Sr0.2)TiO3;rapid thermal annealing (RTA);NTCR;PTCR;Schottky emission;Heywang barrier
公開日期: 2002
摘要: This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba0.8Sr0.2)TiO3 (BST) film post treated by rapid thermal annealing (RTA) in O-2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST/Pt multifilm. As the results, the current density of the RTA-treated BST film was greatly reduced owing to compensation of oxygen vacancies. The RTA-treated BST thin film biased at negative voltage exhibits a negative temperature-coefficient-resistivity (NTCR) behavior, but, intriguingly, that biased at positive voltage reveals a positive temperature-coefficient-resistivity (PTCR) behavior. According to the leakage current analysis, the Schottky emission dominates the negative biased current at upper interface, but the Heywang barrier scattering confines the positive biased current.
URI: http://hdl.handle.net/11536/29155
http://dx.doi.org/10.1080/10584580215416
ISSN: 1058-4587
DOI: 10.1080/10584580215416
期刊: INTEGRATED FERROELECTRICS
Volume: 47
起始頁: 217
結束頁: 225
顯示於類別:會議論文


文件中的檔案:

  1. 000179829400025.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。