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dc.contributor.authorShye, DCen_US
dc.contributor.authorChen, JSen_US
dc.contributor.authorKuo, MWen_US
dc.contributor.authorChou, BCSen_US
dc.contributor.authorJan, CKen_US
dc.contributor.authorWu, MFen_US
dc.contributor.authorChiou, BSen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:43:05Z-
dc.date.available2014-12-08T15:43:05Z-
dc.date.issued2002en_US
dc.identifier.issn1058-4587en_US
dc.identifier.urihttp://hdl.handle.net/11536/29155-
dc.identifier.urihttp://dx.doi.org/10.1080/10584580215416en_US
dc.description.abstractThis work reports the current-temperature characteristics of the low-temperature-sputtered (Ba0.8Sr0.2)TiO3 (BST) film post treated by rapid thermal annealing (RTA) in O-2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST/Pt multifilm. As the results, the current density of the RTA-treated BST film was greatly reduced owing to compensation of oxygen vacancies. The RTA-treated BST thin film biased at negative voltage exhibits a negative temperature-coefficient-resistivity (NTCR) behavior, but, intriguingly, that biased at positive voltage reveals a positive temperature-coefficient-resistivity (PTCR) behavior. According to the leakage current analysis, the Schottky emission dominates the negative biased current at upper interface, but the Heywang barrier scattering confines the positive biased current.en_US
dc.language.isoen_USen_US
dc.subject(Ba0.8Sr0.2)TiO3en_US
dc.subjectrapid thermal annealing (RTA)en_US
dc.subjectNTCRen_US
dc.subjectPTCRen_US
dc.subjectSchottky emissionen_US
dc.subjectHeywang barrieren_US
dc.titleCurrent-temperature characteristics of low-temperature-sputtered (Ba,Sr)TiO3 films post treated by rapid thermal annealingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1080/10584580215416en_US
dc.identifier.journalINTEGRATED FERROELECTRICSen_US
dc.citation.volume47en_US
dc.citation.spage217en_US
dc.citation.epage225en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000179829400025-
Appears in Collections:Conferences Paper


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