統計資料
總造訪次數
| 檢視 | |
|---|---|
| Characterization of the low temperature activated N(+)/P junction formed by implant into silicide method | 115 |
本月總瀏覽
| 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | 一月 2026 | 二月 2026 | |
|---|---|---|---|---|---|---|---|
| Characterization of the low temperature activated N(+)/P junction formed by implant into silicide method | 0 | 0 | 0 | 3 | 2 | 2 | 1 |
檔案下載
| 檢視 | |
|---|---|
| 000256932500036.pdf | 5 |
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 99 |
| 美國 | 13 |
| 印度 | 1 |
| 委內瑞拉 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 97 |
| Kensington | 5 |
| Buffalo | 2 |
| Los Angeles | 2 |
| Menlo Park | 2 |
| Beijing | 1 |
| Dallas | 1 |
| La Guaira | 1 |
| Santa Ana | 1 |
| Shanghai | 1 |