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dc.contributor.authorLi, YMen_US
dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorTretyak, Oen_US
dc.date.accessioned2014-12-08T15:43:08Z-
dc.date.available2014-12-08T15:43:08Z-
dc.date.issued2001-12-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1412578en_US
dc.identifier.urihttp://hdl.handle.net/11536/29183-
dc.description.abstractIn this article we present a unified model for studying the effect of the sizes and shapes of small semiconductor quantum dots on the electron and hole energy states. We solved the three-dimensional effective one band Schrodinger equation for semiconductor quantum dots with disk, lenticular, and conical shapes. For small InAs/GaAs quantum dots we found a substantial difference in the ground state and first excited state electron energies for dots with the same volume but different shapes. Electron energy dependence on volume is found to be quite different from the commonly quoted V-2/3. The exponent can vary over a wide range and depends on the dot shapes. (C) 2001 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleElectron energy state dependence on the shape and size of semiconductor quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1412578en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume90en_US
dc.citation.issue12en_US
dc.citation.spage6416en_US
dc.citation.epage6420en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000172489800095-
dc.citation.woscount34-
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