標題: | Chlorine-induced Si surface segregation on the Ge-terminated Si/Ge(100) surface from core-level photoemission |
作者: | Lin, DS Pan, SY Wu, MW 物理研究所 Institute of Physics |
公開日期: | 15-十二月-2001 |
摘要: | This study investigated the thermal reactions on the Cl-terminated Si/Ge(100)-2x1 surface using synchrotron radiation photoemission spectroscopy. Populations of surface Cl-Ge and CI-Si bonds during annealing are monitored by measuring the intensities of their corresponding Ge 3d, Si 2p, and Cl 2p core-level components. Experimental results clearly demonstrate that no Si atoms are present on the surface after the deposition of 0.8 monolayer Si on the Ge(100) surface at 730 K and that CI termination pulls out the indiffused Si of about two atomic layers deep to form Cl-Si bonds upon annealing at 550-690 K. We attribute such chlorine induced Si segregation to a thermodynamic driving force that favors the CI-Si surface species. Above 680 K, chlorine is desorbed in the form of SiCl2, although the top surface layer of the starting Si/Ge(100) sample consists of Ge-Ge dimers only. |
URI: | http://dx.doi.org/10.1103/PhysRevB.64.233302 http://hdl.handle.net/11536/29184 |
ISSN: | 2469-9950 |
DOI: | 10.1103/PhysRevB.64.233302 |
期刊: | PHYSICAL REVIEW B |
Volume: | 64 |
Issue: | 23 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |