完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Kuang Yaoen_US
dc.contributor.authorChang, Y. H.en_US
dc.contributor.authorLiang, C-Ten_US
dc.contributor.authorAoki, N.en_US
dc.contributor.authorOchiai, Y.en_US
dc.contributor.authorHuang, C. F.en_US
dc.contributor.authorLin, Li-Hungen_US
dc.contributor.authorCheng, K. A.en_US
dc.contributor.authorCheng, H. H.en_US
dc.contributor.authorLin, H. H.en_US
dc.contributor.authorWu, Jau-Yangen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2014-12-08T15:43:08Z-
dc.date.available2014-12-08T15:43:08Z-
dc.date.issued2008-07-23en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/20/29/295223en_US
dc.identifier.urihttp://hdl.handle.net/11536/29198-
dc.description.abstractMagneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magneto-resistivity oscillations due to Landau quantization can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localization.en_US
dc.language.isoen_USen_US
dc.titleProbing Landau quantization with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron systemen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1088/0953-8984/20/29/295223en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume20en_US
dc.citation.issue29en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000257325900043-
顯示於類別:會議論文


文件中的檔案:

  1. 000257325900043.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。