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dc.contributor.authorLee, CKen_US
dc.contributor.authorKao, FJen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:43:11Z-
dc.date.available2014-12-08T15:43:11Z-
dc.date.issued2001-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/29230-
dc.description.abstractNonlinear optical properties of the undoped hybrid vapor phase epitaxy-grown (GaTN film sample) were investigated and analyzed using a tunable femtosecond laser as an excitation source. As the laser wavelength was tuned from 762-796 nm, the sample emitted signals corresponding to the second-harmonic wavelength from 381-398 nm with a quadratic power dependence. A strong three-photon-process-related signal at 367 nm with cubic power dependence was simultaneously observed for the first time.en_US
dc.language.isoen_USen_US
dc.subjectgallium nitrideen_US
dc.subjectnonlinear opticsen_US
dc.subjectthree-photon excitationen_US
dc.subjectsecond harmonic generation (SHG)en_US
dc.subjectconfocal microscopyen_US
dc.titleSimultaneous observation of second-harmonic emission and three-photon excited photoluminescence from hybrid vapor phase epitaxy-grown GaN filmen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume40en_US
dc.citation.issue12en_US
dc.citation.spage6805en_US
dc.citation.epage6806en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000175190700024-
dc.citation.woscount4-
Appears in Collections:Articles


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