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dc.contributor.authorChang, Len_US
dc.contributor.authorLai, SKen_US
dc.contributor.authorChen, FRen_US
dc.contributor.authorKai, JJen_US
dc.date.accessioned2014-12-08T15:43:12Z-
dc.date.available2014-12-08T15:43:12Z-
dc.date.issued2001-11-23en_US
dc.identifier.issn0031-8965en_US
dc.identifier.urihttp://hdl.handle.net/11536/29243-
dc.identifier.urihttp://dx.doi.org/10.1002/1521-396X(200112)188:2<811en_US
dc.description.abstractTransmission electron microscopy has been used to characterize Al segregation in Al0.1Ga0.9N and Al0.3Ga0.7N alloys grown by metal organic chemical vapor deposition on 6H-SiC. It has been found that an interlayer of AlGaN alloy with much higher Al content was formed at first, followed by normal growth of nominal composition of AlGaN alloy. In Al0.1Ga0.9N and Al0.3Ga0.7N films. dislocation lines were also found to have more Al segregated than those regions free of dislocations in the matrix. Furthermore, it shows that more Al atoms segregate to an edge dislocation than to a screw one.en_US
dc.language.isoen_USen_US
dc.titleObservations of segregation of Al in AlGaN alloysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1002/1521-396X(200112)188:2<811en_US
dc.identifier.journalPHYSICA STATUS SOLIDI A-APPLIED RESEARCHen_US
dc.citation.volume188en_US
dc.citation.issue2en_US
dc.citation.spage811en_US
dc.citation.epage814en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000172779700071-
Appears in Collections:Conferences Paper


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